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• W2906934711 endingPage "134" @default.
• W2906934711 startingPage "124" @default.
• W2906934711 abstract "The interaction of chlorosilanes and the silicon surface is an important part of reaction processes, such as hydrochlorination and chemical vapor deposition, involved in the production of high purity silicon. We used plane-wave based density functional theory (DFT) to investigate periodic slabs of the Si(100)-c(4 × 2) surface for adsorption of H2, HCl, SiCl2, dichlorosilane (SiH2Cl2 or DCS), trichlorosilane (SiHCl3 or TCS) and silicon tetrachloride (SiCl4 or STC). The effects of surface coverage, molecule orientation, adsorption site and multiple molecule adsorption were studied. All the molecules could undergo dissociative chemisorption in the right orientation and site placement, with HCl and SiCl2 possessing the strongest binding energies. The H2 molecule preferred lower coverage, the HCl molecule was not much affected by coverage while the SiCl2 molecule strongly preferred higher coverage and the STC molecule was affected negatively by both too high or low coverage. The elementary steps leading to transfer of surface crystal silicon atoms to gas phase molecules as part of the chlorination or hydrochlorination process were then looked at through reaction pathway analysis. The formation of SiCl2 from a surface dimer Si atom was found to prefer an intradimer route with a reaction barrier of 3.62 eV (83.48 kcal/mol), going down to 3.10 eV (71.49 kcal/mol) after removal of the first surface Si atom. The subsequent formation of TCS from this SiCl2 was found to have reaction barrier of 1.07 eV (24.68 kcal/mol). STC could also be formed from this SiCl2 molecule with a reaction barrier of 2.86 eV (65.95 kcal/mol)." @default.
• W2906934711 created "2019-01-11" @default.
• W2906934711 creator A5013329852 @default.
• W2906934711 creator A5077238261 @default.
• W2906934711 date "2019-05-01" @default.
• W2906934711 modified "2023-09-23" @default.
• W2906934711 title "Molecular adsorption and surface formation reactions of HCl, H2 and chlorosilanes on Si(100)-c(4 × 2) with applications for high purity silicon production" @default.
• W2906934711 cites W1649797591 @default.
• W2906934711 cites W1978073276 @default.
• W2906934711 cites W1978471664 @default.
• W2906934711 cites W1979544533 @default.
• W2906934711 cites W1981368803 @default.
• W2906934711 cites W1985165962 @default.
• W2906934711 cites W1997520880 @default.
• W2906934711 cites W2003914554 @default.
• W2906934711 cites W2005268133 @default.
• W2906934711 cites W2013392607 @default.
• W2906934711 cites W2015762944 @default.
• W2906934711 cites W2019889446 @default.
• W2906934711 cites W2025391839 @default.
• W2906934711 cites W2027362254 @default.
• W2906934711 cites W2027645180 @default.
• W2906934711 cites W2028056984 @default.
• W2906934711 cites W2028989736 @default.
• W2906934711 cites W2031430816 @default.
• W2906934711 cites W2036113194 @default.
• W2906934711 cites W2040095716 @default.
• W2906934711 cites W2053899204 @default.
• W2906934711 cites W2054557616 @default.
• W2906934711 cites W2058214407 @default.
• W2906934711 cites W2058425676 @default.
• W2906934711 cites W2070136024 @default.
• W2906934711 cites W2071063613 @default.
• W2906934711 cites W2075720101 @default.
• W2906934711 cites W2078338808 @default.
• W2906934711 cites W2081274246 @default.
• W2906934711 cites W2083367097 @default.
• W2906934711 cites W2084085928 @default.
• W2906934711 cites W2167857226 @default.
• W2906934711 cites W2183964799 @default.
• W2906934711 cites W2190914162 @default.
• W2906934711 cites W2313063795 @default.
• W2906934711 cites W2331598051 @default.
• W2906934711 cites W2465999045 @default.
• W2906934711 cites W2518904947 @default.
• W2906934711 cites W2618216597 @default.
• W2906934711 doi "https://doi.org/10.1016/j.apsusc.2018.12.253" @default.
• W2906934711 hasPublicationYear "2019" @default.
• W2906934711 type Work @default.
• W2906934711 sameAs 2906934711 @default.
• W2906934711 citedByCount "13" @default.
• W2906934711 countsByYear W29069347112019 @default.
• W2906934711 countsByYear W29069347112020 @default.
• W2906934711 countsByYear W29069347112021 @default.
• W2906934711 countsByYear W29069347112022 @default.
• W2906934711 countsByYear W29069347112023 @default.
• W2906934711 crossrefType "journal-article" @default.
• W2906934711 hasAuthorship W2906934711A5013329852 @default.
• W2906934711 hasAuthorship W2906934711A5077238261 @default.
• W2906934711 hasConcept C147789679 @default.
• W2906934711 hasConcept C150394285 @default.
• W2906934711 hasConcept C178790620 @default.
• W2906934711 hasConcept C179104552 @default.
• W2906934711 hasConcept C185592680 @default.
• W2906934711 hasConcept C2779248272 @default.
• W2906934711 hasConcept C2779523567 @default.
• W2906934711 hasConcept C29563950 @default.
• W2906934711 hasConcept C32909587 @default.
• W2906934711 hasConcept C33790079 @default.
• W2906934711 hasConcept C544956773 @default.
• W2906934711 hasConcept C75473681 @default.
• W2906934711 hasConceptScore W2906934711C147789679 @default.
• W2906934711 hasConceptScore W2906934711C150394285 @default.
• W2906934711 hasConceptScore W2906934711C178790620 @default.
• W2906934711 hasConceptScore W2906934711C179104552 @default.
• W2906934711 hasConceptScore W2906934711C185592680 @default.
• W2906934711 hasConceptScore W2906934711C2779248272 @default.
• W2906934711 hasConceptScore W2906934711C2779523567 @default.
• W2906934711 hasConceptScore W2906934711C29563950 @default.
• W2906934711 hasConceptScore W2906934711C32909587 @default.
• W2906934711 hasConceptScore W2906934711C33790079 @default.
• W2906934711 hasConceptScore W2906934711C544956773 @default.
• W2906934711 hasConceptScore W2906934711C75473681 @default.
• W2906934711 hasFunder F4320322015 @default.
• W2906934711 hasFunder F4320322675 @default.
• W2906934711 hasFunder F4320334593 @default.
• W2906934711 hasLocation W29069347111 @default.
• W2906934711 hasOpenAccess W2906934711 @default.
• W2906934711 hasPrimaryLocation W29069347111 @default.
• W2906934711 hasRelatedWork W2029041425 @default.
• W2906934711 hasRelatedWork W2031748932 @default.
• W2906934711 hasRelatedWork W2034617107 @default.
• W2906934711 hasRelatedWork W2078889331 @default.
• W2906934711 hasRelatedWork W2318431781 @default.
• W2906934711 hasRelatedWork W2371493485 @default.
• W2906934711 hasRelatedWork W2555156160 @default.
• W2906934711 hasRelatedWork W3104552494 @default.
• W2906934711 hasRelatedWork W4303968791 @default.

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