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- W2907493338 abstract "Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by homo-epitaxy on a U-shape patterned Si (001) substrate. With in-situ III-V growth on such substrates by the III-V/IV dual chamber molecular beam epitaxy, a high-quality GaAs layer is obtained with threading dislocation density approximately ~ 106 cm−2 via electron channeling contrast image (ECCI) method. Strong room-temperature emission of InAs/GaAs and InAs/InGaAs quantum dots (QDs) at O-band (1300 nm) and C/L-band (1550 nm) telecommunication wavelengths are both achieved on Si (001) substrates." @default.
- W2907493338 created "2019-01-11" @default.
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- W2907493338 date "2018-10-01" @default.
- W2907493338 modified "2023-09-26" @default.
- W2907493338 title "InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm" @default.
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- W2907493338 doi "https://doi.org/10.1109/acp.2018.8596018" @default.
- W2907493338 hasPublicationYear "2018" @default.
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