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• W2908063315 abstract "By introducing a thin non-stoichiometric CeO2-x switching layer between the high oxygen affinity metal TaN top electrode and the TiO2 layer in a TaN/CeO2-x/TiO2/Pt bilayer (BL) device, it is possible to enhance the endurance characteristics and overcome the reliability issue. Compared with a single layer device, a BL device significantly enhances the number of direct current overswitching cycles to &gt;1.2 × 104, non-destructive retention (&gt;104 s), and switching uniformity. A TaON interface layer is formed which served as a reservoir of oxygen ions (O2−) in the SET-process and acts as an O2− supplier to refill the oxygen vacancies in the RESET-process and so plays a key role in the formation and rupture of conductive filaments. This study demonstrates that simply introducing a thin non-stoichiometric CeO2-x switching layer into TiO2-based devices can facilitate the enhancement of the endurance property for future nonvolatile memory applications." @default.
• W2908063315 created "2019-01-11" @default.
• W2908063315 creator A5007410114 @default.
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• W2908063315 date "2019-01-04" @default.
• W2908063315 modified "2023-10-01" @default.
• W2908063315 title "Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO_2-x switching layer in TiO₂-based resistive random access memory" @default.
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• W2908063315 doi "https://doi.org/10.1063/1.5066586" @default.
• W2908063315 hasPublicationYear "2019" @default.
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