Matches in SemOpenAlex for { <https://semopenalex.org/work/W2909172052> ?p ?o ?g. }
- W2909172052 abstract "The authors investigate sputtering of a Ti3SiC2 compound target at temperatures ranging from RT (no applied external heating) to 970 °C as well as the influence of the sputtering power at 850 °C for the deposition of Ti3SiC2 films on Al2O3(0001) substrates. Elemental composition obtained from time-of-flight energy elastic recoil detection analysis shows an excess of carbon in all films, which is explained by differences in the angular distribution between C, Si, and Ti, where C scatters the least during sputtering. The oxygen content is 2.6 at. % in the film deposited at RT and decreases with increasing deposition temperature, showing that higher temperatures favor high purity films. Chemical bonding analysis by x-ray photoelectron spectroscopy shows C–Ti and Si–C bonding in the Ti3SiC2 films and Si–Si bonding in the Ti3SiC2 compound target. X-ray diffraction reveals that the phases Ti3SiC2, Ti4SiC3, and Ti7Si2C5 can be deposited from a Ti3SiC2 compound target at substrate temperatures above 850 °C and with the growth of TiC and the Nowotny phase Ti5Si3Cx at lower temperatures. High-resolution scanning transmission electron microscopy shows epitaxial growth of Ti3SiC2, Ti4SiC3, and Ti7Si2C5 on TiC at 970 °C. Four-point probe resistivity measurements give values in the range ∼120 to ∼450 μΩ cm and with the lowest values obtained for films containing Ti3SiC2, Ti4SiC3, and Ti7Si2C5." @default.
- W2909172052 created "2019-01-25" @default.
- W2909172052 creator A5002281536 @default.
- W2909172052 creator A5020723421 @default.
- W2909172052 creator A5036498106 @default.
- W2909172052 creator A5048978284 @default.
- W2909172052 creator A5050510363 @default.
- W2909172052 creator A5057508291 @default.
- W2909172052 creator A5062888511 @default.
- W2909172052 creator A5063729961 @default.
- W2909172052 creator A5064179326 @default.
- W2909172052 creator A5086073947 @default.
- W2909172052 date "2019-01-17" @default.
- W2909172052 modified "2023-10-14" @default.
- W2909172052 title "Compositional dependence of epitaxial Tin+1SiCn MAX-phase thin films grown from a Ti3SiC2 compound target" @default.
- W2909172052 cites W1483442472 @default.
- W2909172052 cites W1532291909 @default.
- W2909172052 cites W1577365476 @default.
- W2909172052 cites W1655121849 @default.
- W2909172052 cites W1659358582 @default.
- W2909172052 cites W1966735754 @default.
- W2909172052 cites W1967686140 @default.
- W2909172052 cites W1976129753 @default.
- W2909172052 cites W1979794163 @default.
- W2909172052 cites W1985439506 @default.
- W2909172052 cites W1986280467 @default.
- W2909172052 cites W1988594650 @default.
- W2909172052 cites W1989554193 @default.
- W2909172052 cites W1990508091 @default.
- W2909172052 cites W1991928332 @default.
- W2909172052 cites W1992866790 @default.
- W2909172052 cites W1999572552 @default.
- W2909172052 cites W2009464644 @default.
- W2909172052 cites W2009937066 @default.
- W2909172052 cites W2015056245 @default.
- W2909172052 cites W2025607670 @default.
- W2909172052 cites W2027847231 @default.
- W2909172052 cites W2028141197 @default.
- W2909172052 cites W2033488807 @default.
- W2909172052 cites W2041348595 @default.
- W2909172052 cites W2041801455 @default.
- W2909172052 cites W2043003417 @default.
- W2909172052 cites W2047080665 @default.
- W2909172052 cites W2049196100 @default.
- W2909172052 cites W2051633272 @default.
- W2909172052 cites W2053902070 @default.
- W2909172052 cites W2058231323 @default.
- W2909172052 cites W2075340876 @default.
- W2909172052 cites W2075704737 @default.
- W2909172052 cites W2084207547 @default.
- W2909172052 cites W2089891127 @default.
- W2909172052 cites W2095349198 @default.
- W2909172052 cites W2097622395 @default.
- W2909172052 cites W2118155987 @default.
- W2909172052 cites W2122001513 @default.
- W2909172052 cites W2124210268 @default.
- W2909172052 cites W2146506701 @default.
- W2909172052 cites W2154674568 @default.
- W2909172052 cites W2157672418 @default.
- W2909172052 cites W2161449390 @default.
- W2909172052 cites W2314234353 @default.
- W2909172052 cites W2474391653 @default.
- W2909172052 cites W2530217879 @default.
- W2909172052 cites W2559277480 @default.
- W2909172052 cites W2567745496 @default.
- W2909172052 cites W2587248279 @default.
- W2909172052 cites W2604726162 @default.
- W2909172052 cites W2752068391 @default.
- W2909172052 cites W2753500818 @default.
- W2909172052 cites W2774395985 @default.
- W2909172052 cites W2795478908 @default.
- W2909172052 cites W2806477448 @default.
- W2909172052 cites W2808381831 @default.
- W2909172052 doi "https://doi.org/10.1116/1.5065468" @default.
- W2909172052 hasPublicationYear "2019" @default.
- W2909172052 type Work @default.
- W2909172052 sameAs 2909172052 @default.
- W2909172052 citedByCount "8" @default.
- W2909172052 countsByYear W29091720522019 @default.
- W2909172052 countsByYear W29091720522020 @default.
- W2909172052 countsByYear W29091720522021 @default.
- W2909172052 countsByYear W29091720522022 @default.
- W2909172052 crossrefType "journal-article" @default.
- W2909172052 hasAuthorship W2909172052A5002281536 @default.
- W2909172052 hasAuthorship W2909172052A5020723421 @default.
- W2909172052 hasAuthorship W2909172052A5036498106 @default.
- W2909172052 hasAuthorship W2909172052A5048978284 @default.
- W2909172052 hasAuthorship W2909172052A5050510363 @default.
- W2909172052 hasAuthorship W2909172052A5057508291 @default.
- W2909172052 hasAuthorship W2909172052A5062888511 @default.
- W2909172052 hasAuthorship W2909172052A5063729961 @default.
- W2909172052 hasAuthorship W2909172052A5064179326 @default.
- W2909172052 hasAuthorship W2909172052A5086073947 @default.
- W2909172052 hasBestOaLocation W29091720522 @default.
- W2909172052 hasConcept C110738630 @default.
- W2909172052 hasConcept C111368507 @default.
- W2909172052 hasConcept C113196181 @default.
- W2909172052 hasConcept C127313418 @default.
- W2909172052 hasConcept C127413603 @default.
- W2909172052 hasConcept C171250308 @default.