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• W2909811378 endingPage "1950009" @default.
• W2909811378 startingPage "1950009" @default.
• W2909811378 abstract "The transfer and low frequency noise characteristics of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) were measured in the temperature range of 230–430 K. The variation of threshold voltage, field effect mobility and sub-threshold swing with increasing temperatures were then extracted and analyzed. Moreover, the shifts of low frequency noise in the a-Si:H TFT under various temperatures are reported for the first time. The variation of flatband voltage noise power spectral density with temperature is also calculated and discussed." @default.
• W2909811378 created "2019-01-25" @default.
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• W2909811378 date "2019-01-20" @default.
• W2909811378 modified "2023-09-25" @default.
• W2909811378 title "Temperature dependence of conduction and low frequency noise characteristics in hydrogenated amorphous silicon thin film transistors" @default.
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• W2909811378 doi "https://doi.org/10.1142/s021798491950009x" @default.
• W2909811378 hasPublicationYear "2019" @default.
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