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- W2910785643 abstract "Recent emergence of data-driven and computation hungry algorithms has fuelled the demand for energy and processing power at an unprecedented rate. Semiconductor industry is, therefore, under constant pressure towards developing energy efficient devices. A Shift towards materials with higher figure-of-merit compared to Si, such as GaN for power conversion is one of the options currently being pursued. A minimisation in parasitic and static power losses in GaN can be brought about by realising on-chip CMOS based gate drivers for GaN power devices. At present, p-channel MOSHFETs in GaN show poor performance due to the low mobility and the severe trade-off between |ION| and |Vth|.For the first time, it is shown that despite a poor hole mobility, it is possible to improve the on-current as well as minimise |ION| - |Vth| trade-off, by adopting a combination of techniques: using an AlGaN cap, biased two-dimensional electron gas, and shrinking source-gate and gate-drain access region and channel lengths. As part of this work, a novel vertical p-channel heterojunction tunnel FET (TFET) utilising polarisation induced tunnel junction (PITJ) is also explored, which unlike common TFETs, shows non-ambipolar transfer characteristics and a better electrostatic control over the tunneling region via the gate.Meeting the ever-increasing demand for computation would require continuous scaling of transistor physical dimensions and supply voltage. While a further reduction in physical dimension is expected to come from adopting a vertical integration scheme, scaling in supply voltage would require achieving sub-60 mV/dec of subthreshold swing. The two common approaches to achieve this are TFETs and negative capacitance (NC) FETs, where the NC operation is commonly associated with ferroelectric materials.This work develops a model to explain sub-60 mV/dec, observed in Ta2O5/ZnO thin-film-transistors, which is governed by the motion of oxygen ions inside Ta2O5, leading to NC under dynamic gate bias sweep." @default.
- W2910785643 created "2019-01-25" @default.
- W2910785643 creator A5001074861 @default.
- W2910785643 date "2018-12-01" @default.
- W2910785643 modified "2023-09-24" @default.
- W2910785643 title "Novel Approaches to Power Efficient GaN and Negative Capacitance Devices" @default.
- W2910785643 hasPublicationYear "2018" @default.
- W2910785643 type Work @default.
- W2910785643 sameAs 2910785643 @default.
- W2910785643 citedByCount "0" @default.
- W2910785643 crossrefType "dissertation" @default.
- W2910785643 hasAuthorship W2910785643A5001074861 @default.
- W2910785643 hasConcept C119599485 @default.
- W2910785643 hasConcept C121332964 @default.
- W2910785643 hasConcept C127413603 @default.
- W2910785643 hasConcept C147120987 @default.
- W2910785643 hasConcept C154318817 @default.
- W2910785643 hasConcept C165801399 @default.
- W2910785643 hasConcept C172385210 @default.
- W2910785643 hasConcept C17525397 @default.
- W2910785643 hasConcept C192562407 @default.
- W2910785643 hasConcept C24326235 @default.
- W2910785643 hasConcept C25621703 @default.
- W2910785643 hasConcept C30066665 @default.
- W2910785643 hasConcept C41008148 @default.
- W2910785643 hasConcept C46362747 @default.
- W2910785643 hasConcept C49040817 @default.
- W2910785643 hasConcept C61696701 @default.
- W2910785643 hasConcept C62520636 @default.
- W2910785643 hasConceptScore W2910785643C119599485 @default.
- W2910785643 hasConceptScore W2910785643C121332964 @default.
- W2910785643 hasConceptScore W2910785643C127413603 @default.
- W2910785643 hasConceptScore W2910785643C147120987 @default.
- W2910785643 hasConceptScore W2910785643C154318817 @default.
- W2910785643 hasConceptScore W2910785643C165801399 @default.
- W2910785643 hasConceptScore W2910785643C172385210 @default.
- W2910785643 hasConceptScore W2910785643C17525397 @default.
- W2910785643 hasConceptScore W2910785643C192562407 @default.
- W2910785643 hasConceptScore W2910785643C24326235 @default.
- W2910785643 hasConceptScore W2910785643C25621703 @default.
- W2910785643 hasConceptScore W2910785643C30066665 @default.
- W2910785643 hasConceptScore W2910785643C41008148 @default.
- W2910785643 hasConceptScore W2910785643C46362747 @default.
- W2910785643 hasConceptScore W2910785643C49040817 @default.
- W2910785643 hasConceptScore W2910785643C61696701 @default.
- W2910785643 hasConceptScore W2910785643C62520636 @default.
- W2910785643 hasLocation W29107856431 @default.
- W2910785643 hasOpenAccess W2910785643 @default.
- W2910785643 hasPrimaryLocation W29107856431 @default.
- W2910785643 hasRelatedWork W163997835 @default.
- W2910785643 hasRelatedWork W204559282 @default.
- W2910785643 hasRelatedWork W2169331355 @default.
- W2910785643 hasRelatedWork W2288207758 @default.
- W2910785643 hasRelatedWork W2290111054 @default.
- W2910785643 hasRelatedWork W2345094004 @default.
- W2910785643 hasRelatedWork W2545148390 @default.
- W2910785643 hasRelatedWork W2562943674 @default.
- W2910785643 hasRelatedWork W2596859557 @default.
- W2910785643 hasRelatedWork W2605069900 @default.
- W2910785643 hasRelatedWork W2732791282 @default.
- W2910785643 hasRelatedWork W2945538368 @default.
- W2910785643 hasRelatedWork W2946871514 @default.
- W2910785643 hasRelatedWork W2971759069 @default.
- W2910785643 hasRelatedWork W3007317310 @default.
- W2910785643 hasRelatedWork W3106060418 @default.
- W2910785643 hasRelatedWork W3167465558 @default.
- W2910785643 hasRelatedWork W3169337041 @default.
- W2910785643 hasRelatedWork W339472304 @default.
- W2910785643 hasRelatedWork W2166638632 @default.
- W2910785643 isParatext "false" @default.
- W2910785643 isRetracted "false" @default.
- W2910785643 magId "2910785643" @default.
- W2910785643 workType "dissertation" @default.