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• W2911408025 startingPage "249" @default.
• W2911408025 abstract "Operando color microscopy and ex situ AFM were used to investigate the lithiation process in pure (a-Si:H) and methylated (a-Si1-x(CH3)x:H) amorphous silicon thin layers. Color analysis of optical images allows for monitoring thickness changes of a-Si:H layers. Unlike pure a-Si:H, the first lithiation of a-Si1-x(CH3)x:H is found to be spatially non-uniform: lithiation starts at a limited number of locations then expands radially, forming circular lithiation spots. The morphology of the lithiation spots and their evolution is accurately measured by ex situ AFM. A mechanism is proposed to explain this phenomenon, involving the high resistivity of methylated silicon and the existence of low-resistance point defects." @default.
• W2911408025 created "2019-02-21" @default.
• W2911408025 creator A5013092944 @default.
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• W2911408025 date "2019-04-01" @default.
• W2911408025 modified "2023-10-10" @default.
• W2911408025 title "Lithiation of pure and methylated amorphous silicon: Monitoring by operando optical microscopy and ex situ atomic force microscopy" @default.
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• W2911408025 doi "https://doi.org/10.1016/j.electacta.2019.02.016" @default.
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