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- W2911596479 abstract "Molecular beam epitaxy (MBE) growth and characterization of transition-metal (TM)- and rare-earth (RE)-doped GaN-based dilute magnetic semiconductors (DMSs), as well as examples of spintronic semiconductor devices and the present status to realize such devices, are described. Substitutional incorporation of TM and RE atoms into III-nitride semiconductors and no phase separation are confirmed by X-ray diffraction and X-ray absorption fine structure measurements. Clear hysteresis and saturation are observed in the magnetization vs. magnetic field curves at room temperature. Carrier-mediated ferromagnetism is confirmed. Photoluminescence (PL) emission is observed and from RE-doped GaN, sharp PL emission related to inner-4f transition is observed. A strong redshift of excitonic PL with magnetic field is observed in the GaGdN/AlGaN MQW samples, indicating an enhancement of Zeeman splitting of the free-carrier energy levels." @default.
- W2911596479 created "2019-02-21" @default.
- W2911596479 creator A5017480216 @default.
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- W2911596479 date "2019-02-08" @default.
- W2911596479 modified "2023-10-16" @default.
- W2911596479 title "<scp>III</scp> ‐Nitride Dilute Magnetic Semiconductors" @default.
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- W2911596479 doi "https://doi.org/10.1002/9781119354987.ch18" @default.
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