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- W2911669782 abstract "We review the developments in the growth by molecular-beam epitaxy (MBE) of III–Sb compound semiconductors and heterostructures for optoelectronic device applications. After discussing the peculiarities of antimonides and their potential for optoelectronic applications, we give a brief historical survey of their epitaxial growth. Then we review the progress in the MBE growth of III–Sb materials from MBE system evolutions to alloy, doping, and interface control, and metamorphic growth on Si substrates, insisting particularly on recent achievements. The objective of this chapter is to provide useful information and references to readers who are not familiar with the MBE of antimonide compounds and heterostructures." @default.
- W2911669782 created "2019-02-21" @default.
- W2911669782 creator A5017480216 @default.
- W2911669782 creator A5064831959 @default.
- W2911669782 date "2019-02-08" @default.
- W2911669782 modified "2023-10-16" @default.
- W2911669782 title "Molecular‐Beam Epitaxy of Antimonides for Optoelectronic Devices" @default.
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