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• W2911685957 abstract "Precise control of epitaxial growth by molecular beam epitaxy (MBE) with reflection high-energy electron beam diffraction (RHEED) enables us to fabricate various semiconductor nanostructures. Many quantum well (QW) devices have already been developed and put to practical use, such as semiconductor lasers. In addition, various special growth techniques of well-controlled quantum well wire (QWR), nanowire (NWR), and quantum dot (QD) structures have been attempted so far. In this chapter, basic formation processes of QWs, QWRs, NWRs, and QDs are described." @default.
• W2911685957 created "2019-02-21" @default.
• W2911685957 creator A5080432441 @default.
• W2911685957 date "2019-02-08" @default.
• W2911685957 modified "2023-10-16" @default.
• W2911685957 title "Nanostructure Formation Process of <scp>MBE</scp>" @default.
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• W2911685957 doi "https://doi.org/10.1002/9781119354987.ch4" @default.
• W2911685957 hasPublicationYear "2019" @default.
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