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• W2911695650 abstract "In this work, we demonstrate an easy channel-engineering method using oxygen-plasma treatment followed by in-situ annealing before gate dielectric deposition on GaN. A crystalline GaON nanophase was identified to serve as an optimized channel layer in the gate region of E-mode GaN metal-insulator-semiconductor field-effect transistors (MIS-FETs). The atomic-scale element distribution and crystalline structure of the GaON nanophase were revealed by aberration-corrected scanning transmission electron microscopy. First-principles calculations further correlate the enhanced thermal stability with the atomic observation of the refined structure in the GaON nanophase. Owing to the atomically sharp gate-dielectric/channel interface and low interface trap density (Dit), the boosted performance of the E-mode MIS-FET was achieved with the GaON channel. This study not only validates an approach of local channel modification for high-performance normally off GaN MIS-FETs but also opens possibilities of utilizing this crystalline GaON nanophase as a promising channel material in various GaN devices." @default.
• W2911695650 created "2019-02-21" @default.
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• W2911695650 date "2019-02-04" @default.
• W2911695650 modified "2023-10-18" @default.
• W2911695650 title "Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel" @default.
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• W2911695650 doi "https://doi.org/10.1063/1.5078767" @default.
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