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• W2911817085 abstract "Colloidal semiconductor nanocrystals (NCs) are a promising materials class for solution-processable, next-generation electronic devices. However, most high-performance devices and circuits have been achieved using NCs containing toxic elements, which may limit their further device development. We fabricate high mobility CuInSe2 NC field-effect transistors (FETs) using a solution-based, post-deposition, sequential cation exchange process that starts with electronically coupled, thiocyanate (SCN)-capped CdSe NC thin films. First Cu+ is substituted for Cd2+ transforming CdSe NCs to Cu-rich Cu2Se NC films. Next, Cu2Se NC films are dipped into a Na2Se solution to Se-enrich the NCs, thus compensating the Cu-rich surface, promoting fusion of the Cu2Se NCs, and providing sites for subsequent In-dopants. The liquid-coordination-complex trioctylphosphine–indium chloride (TOP–InCl3) is used as a source of In3+ to partially exchange and n-dope CuInSe2 NC films. We demonstrate Al2O3-encapsulated, air-stable CuInSe2 NC FETs with linear (saturation) electron mobilities of 8.2 ± 1.8 cm2/(V s) (10.5 ± 2.4 cm2/(V s)) and with current modulation of 105, comparable to that for high-performance Cd-, Pb-, and As-based NC FETs. The CuInSe2 NC FETs are used as building blocks of integrated inverters to demonstrate their promise for low-cost, low-toxicity NC circuits." @default.
• W2911817085 created "2019-02-21" @default.
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• W2911817085 date "2019-02-05" @default.
• W2911817085 modified "2023-10-17" @default.
• W2911817085 title "Air-Stable CuInSe₂ Nanocrystal Transistors and Circuits <i>via</i> Post-Deposition Cation Exchange" @default.
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• W2911817085 doi "https://doi.org/10.1021/acsnano.8b09055" @default.
• W2911817085 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/30707549" @default.
• W2911817085 hasPublicationYear "2019" @default.
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