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- W2911995195 abstract "We have studied the growth processes of MoSe2 thin films on Si(111) substrates by molecular-beam epitaxy. The surface termination of the Si substrate plays a crucial role in the growth of epitaxial MoSe2 films: when the Si(111) substrate is passivated with a GaSe bilayer, highly oriented MoSe2 films could be grown under optimized growth conditions. On the other hand, the growth on the Si(111)-(7 × 7) substrate results in the preferential formation of the MoSi2 phase, which prevents the formation of epitaxial MoSe2 films. We found that the As termination of the Si(111) surface is less effective in promoting the planar MoSe2 growth, despite its highly passivated nature." @default.
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- W2911995195 date "2019-02-04" @default.
- W2911995195 modified "2023-09-23" @default.
- W2911995195 title "Heteroepitaxy of MoSe2 on Si(111) substrates: Role of surface passivation" @default.
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- W2911995195 doi "https://doi.org/10.1063/1.5083974" @default.
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