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• W2912093784 endingPage "035024" @default.
• W2912093784 startingPage "035024" @default.
• W2912093784 abstract "Spin accumulation effect in Fe3Si/p-Si structure with low boron doped silicon substrate was found. Calculated spin lifetimes are comparable with results reported earlier but for structures with highly doped semiconductors (SC) with or without a tunnel barrier introduced between the SC and ferromagnet (FM). Electrical characterization of a prepared Fe3Si/p-Si diode allowed the determination of possible reasons for the pronounced spin signal. Analysis of the forward bias I-V curve revealed a Schottky barrier at the Fe3Si/p-Si interface with a height of Then, using impedance spectroscopy, we observed interface states localized in the band gap of silicon with energy of ELS = 40 meV. Such states most probably cause the observed spin signal. We believe that in our experiment, spin-dependent hole extraction was performed via the interface states resulting in the minority spin accumulation in the silicon valence band. The observed effect paves the way to the development of different spintronic devices based on FM/SC structures without dielectric tunneling barriers." @default.
• W2912093784 created "2019-02-21" @default.
• W2912093784 creator A5009970831 @default.
• W2912093784 creator A5018773624 @default.
• W2912093784 creator A5024838601 @default.
• W2912093784 creator A5029705881 @default.
• W2912093784 creator A5030890410 @default.
• W2912093784 creator A5036992746 @default.
• W2912093784 creator A5043580644 @default.
• W2912093784 creator A5048241464 @default.
• W2912093784 creator A5055788136 @default.
• W2912093784 creator A5063977749 @default.
• W2912093784 creator A5081106194 @default.
• W2912093784 date "2019-02-20" @default.
• W2912093784 modified "2023-09-24" @default.
• W2912093784 title "Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe₃Si/p-Si structure" @default.
• W2912093784 cites W102387161 @default.
• W2912093784 cites W1564686994 @default.
• W2912093784 cites W1624098932 @default.
• W2912093784 cites W1649884554 @default.
• W2912093784 cites W1969672588 @default.
• W2912093784 cites W1975690147 @default.
• W2912093784 cites W1976286065 @default.
• W2912093784 cites W1977701822 @default.
• W2912093784 cites W1986105084 @default.
• W2912093784 cites W1991410827 @default.
• W2912093784 cites W1992414363 @default.
• W2912093784 cites W1992471340 @default.
• W2912093784 cites W2003185587 @default.
• W2912093784 cites W2014985052 @default.
• W2912093784 cites W2017389770 @default.
• W2912093784 cites W2037450282 @default.
• W2912093784 cites W2041201148 @default.
• W2912093784 cites W2041429965 @default.
• W2912093784 cites W2042109391 @default.
• W2912093784 cites W2042473487 @default.
• W2912093784 cites W2045313103 @default.
• W2912093784 cites W2045896949 @default.
• W2912093784 cites W2059192473 @default.
• W2912093784 cites W2061402003 @default.
• W2912093784 cites W2061833489 @default.
• W2912093784 cites W2065675346 @default.
• W2912093784 cites W2067470609 @default.
• W2912093784 cites W2078613949 @default.
• W2912093784 cites W2078906039 @default.
• W2912093784 cites W2105703830 @default.
• W2912093784 cites W2128103878 @default.
• W2912093784 cites W2132892369 @default.
• W2912093784 cites W2238860981 @default.
• W2912093784 cites W2291963874 @default.
• W2912093784 cites W2332189377 @default.
• W2912093784 cites W2333487356 @default.
• W2912093784 cites W2460074376 @default.
• W2912093784 cites W2465947233 @default.
• W2912093784 cites W2490765418 @default.
• W2912093784 cites W2504635685 @default.
• W2912093784 cites W2524533781 @default.
• W2912093784 cites W2552041588 @default.
• W2912093784 cites W2580942133 @default.
• W2912093784 cites W2591709354 @default.
• W2912093784 cites W2623794112 @default.
• W2912093784 cites W2755427979 @default.
• W2912093784 cites W2810205301 @default.
• W2912093784 cites W2963594033 @default.
• W2912093784 cites W2963771263 @default.
• W2912093784 cites W2963866763 @default.
• W2912093784 cites W2970350952 @default.
• W2912093784 cites W3121554203 @default.
• W2912093784 doi "https://doi.org/10.1088/1361-6641/ab0327" @default.
• W2912093784 hasPublicationYear "2019" @default.
• W2912093784 type Work @default.
• W2912093784 sameAs 2912093784 @default.
• W2912093784 citedByCount "13" @default.
• W2912093784 countsByYear W29120937842019 @default.
• W2912093784 countsByYear W29120937842020 @default.
• W2912093784 countsByYear W29120937842021 @default.
• W2912093784 countsByYear W29120937842022 @default.
• W2912093784 countsByYear W29120937842023 @default.
• W2912093784 crossrefType "journal-article" @default.
• W2912093784 hasAuthorship W2912093784A5009970831 @default.
• W2912093784 hasAuthorship W2912093784A5018773624 @default.
• W2912093784 hasAuthorship W2912093784A5024838601 @default.
• W2912093784 hasAuthorship W2912093784A5029705881 @default.
• W2912093784 hasAuthorship W2912093784A5030890410 @default.
• W2912093784 hasAuthorship W2912093784A5036992746 @default.
• W2912093784 hasAuthorship W2912093784A5043580644 @default.
• W2912093784 hasAuthorship W2912093784A5048241464 @default.
• W2912093784 hasAuthorship W2912093784A5055788136 @default.
• W2912093784 hasAuthorship W2912093784A5063977749 @default.
• W2912093784 hasAuthorship W2912093784A5081106194 @default.
• W2912093784 hasBestOaLocation W29120937842 @default.
• W2912093784 hasConcept C108225325 @default.
• W2912093784 hasConcept C120398109 @default.
• W2912093784 hasConcept C121332964 @default.
• W2912093784 hasConcept C125938697 @default.
• W2912093784 hasConcept C16115445 @default.
• W2912093784 hasConcept C181966813 @default.
• W2912093784 hasConcept C192562407 @default.

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