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- W2912097054 abstract "Silicon nitride (SiNx:H) films are generally used as passivation and anti-reflection layers in solar cells, and they are usually made by plasma-enhanced chemical vapor deposition (PECVD). Silicon nitride could act as a hydrogen diffusion source, and it also plays a role in chemical passivation. In this study, we investigated the improvement of the passivation characteristics of the passivated contact structure by a PECVD SiNx:H hydrogenation process and the characteristics of SiNx:H for improving the passivation characteristics. It was confirmed that the passivation characteristics cannot be predicted only by the mass density of the SiNx:H film, and the chemical bonding ratio in the SiNx:H thin film is also important. In addition, higher passivation characteristics can be obtained when SiNx:H thin films with higher SH bond concentration and dominant N2SiH2 bonds are used." @default.
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- W2912097054 date "2019-04-01" @default.
- W2912097054 modified "2023-10-18" @default.
- W2912097054 title "Characterization of SiNx:H thin film as a hydrogen passivation layer for silicon solar cells with passivated contacts" @default.
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- W2912097054 doi "https://doi.org/10.1016/j.tsf.2019.02.016" @default.
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