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- W2912107936 abstract "This paper reports the optimization of the silicon film thickness on the Back Enhanced (BE) SOI MOSFET working as a light sensor on the visible spectrum. The BE SOI MOSFET is a kind of undoped junction-less SOI transistor, which works as an n-type or p-type MOS, depending on the back bias conditions. The BE SOI underlap regions (drain/source to gate) are used as a light sensor that can be integrated on commercial UTB (Ultra Thin Body) SOI technologies. This paper is going to explore the sensitivity of the BE SOI MOSFET as a function of the silicon thickness (from 5 to 30nm) and for wavelengths from the ultraviolet-A (UV-A, $lambda approx 400$ nm) to red ($lambda approx 635$ nm) spectra. Experimental and simulated data indicate that the optimized silicon film $textbf{t}_{mathbf {Si}}$textbf is 15nm, where the generation and recombination influences present the highest sensitivity for the visible spectrum." @default.
- W2912107936 created "2019-02-21" @default.
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- W2912107936 date "2018-10-01" @default.
- W2912107936 modified "2023-09-27" @default.
- W2912107936 title "Optimization of the silicon thickness on Back Enhanced (BE) SOI pMOSFET working as a visible spectrum light sensor" @default.
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- W2912107936 doi "https://doi.org/10.1109/s3s.2018.8640140" @default.
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