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- W2912118168 abstract "We report on a high performance Pt/n−Ga2O3/n+Ga2O3 solar blind Schottky photodiode that has been grown by metalorganic chemical vapor deposition. The active area of the photodiode was fabricated using ∼30 Å thick semi-transparent Pt that has up to 90% transparency to UV radiation with wavelengths < 260 nm. The fabricated photodiode exhibited Schottky characteristics with a turn-on voltage of ∼1 V and a rectification ratio of ∼108 at ±2 V and showed deep UV solar blind detection at 0 V. The Schottky photodiode exhibited good device characteristics such as an ideality factor of 1.23 and a breakdown voltage of ∼110 V. The spectral response showed a maximum absolute responsivity of 0.16 A/W at 222 nm at zero bias corresponding to an external quantum efficiency of ∼87.5%. The cutoff wavelength and the out of band rejection ratio of the devices were ∼260 nm and ∼104, respectively, showing a true solar blind operation with an excellent selectivity. The time response is in the millisecond range and has no long-time decay component which is common in photoconductive wide bandgap devices." @default.
- W2912118168 created "2019-02-21" @default.
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- W2912118168 date "2019-02-01" @default.
- W2912118168 modified "2023-10-15" @default.
- W2912118168 title "Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film" @default.
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- W2912118168 doi "https://doi.org/10.1063/1.5064471" @default.
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