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- W2912184578 abstract "We demonstrate a stabilized black phosphorus (BP) 2D platform thanks to an ultrathin MgO barrier, as required for spintronic device integration. The in-situ MgO layer deposition is achieved by using a large-scale atomic layer deposition process with high nucleation density. Raman spectroscopy studies show that this layer protects the BP from degradation in ambient conditions, unlocking in particular the possibility to carry out usual lithographic fabrication steps. The resulting MgO/BP stack is then integrated in a device and probed electrically, confirming the tunnel properties of the ultrathin MgO contacts. We believe that this demonstration of a BP material platform passivated with a functional MgO tunnel barrier provides a promising perspective for BP spin transport devices." @default.
- W2912184578 created "2019-02-21" @default.
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- W2912184578 date "2019-02-04" @default.
- W2912184578 modified "2023-10-12" @default.
- W2912184578 title "Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform" @default.
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- W2912184578 doi "https://doi.org/10.1063/1.5086840" @default.
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