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• W2912195042 abstract "We have prepared CuO-based structures including Au/CuO/Pt and Au/CuO/Cu/Pt films and studied the memristive characteristics of the two samples. Current-voltage curves of the samples suggest that both CuO-based films are typical memristive devices, showing conventional pinched hysteresis loops. Furthermore, the presented Au/CuO/Cu/Pt structure with a seed Cu layer between CuO and bottom electrodes Pt demonstrates more typical memristive and better retention characteristics than Au/CuO/Pt. In order to explore the conducting mechanism for improved memristive properties, the electric transport characteristics of the device are analyzed using a space charge limited current and charge trap defect theory." @default.
• W2912195042 created "2019-02-21" @default.
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• W2912195042 date "2019-02-11" @default.
• W2912195042 modified "2023-10-18" @default.
• W2912195042 title "Improvement of memristive properties in CuO films with a seed Cu layer" @default.
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• W2912195042 doi "https://doi.org/10.1063/1.5079876" @default.
• W2912195042 hasPublicationYear "2019" @default.
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