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- W2912264807 abstract "Advanced channel formation technologies called HEtero-layer-lift-off utilizing SiGe heteroepitaxy have been realized for fabricating ultrathin body (UTB) Ge-on-insulator (GeOI) structures. Insertion of SiGe etching stop layer was found to be effective for reducing GeOI body thickness ( $T_{mathrm {body}}$ ) fluctuation. Backside Si passivation for Ge/buried oxide interface has been verified to suppress backside Coulomb scattering and help to induce volume inversion effect. With improvement of backside interfacial quality and precise control of GeOI $T_{mathrm {body}}$ , primary carrier scattering factors in GeOI channel have been effectively reduced, resulting in significant improvement of hole mobility. High hole mobility of ~150 cm2/Vs in UTB GeOI pMOSFETs without strain technology has been demonstrated, which also outperformed Si universal mobility by 1.5 times even under $T_{mathrm {body}}$ of 9 nm. With low-thermal-budget process compatibility, UTB GeOI platform is very promising for future Ge large-scale integrated circuits devices used in monolithic 3-D integration scheme." @default.
- W2912264807 created "2019-02-21" @default.
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- W2912264807 date "2019-03-01" @default.
- W2912264807 modified "2023-10-16" @default.
- W2912264807 title "Physical Mechanisms of Mobility Enhancement in Ultrathin Body GeOI pMOSFETs Fabricated by HEtero-Layer-Lift-Off Technology" @default.
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- W2912264807 doi "https://doi.org/10.1109/ted.2019.2895349" @default.
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