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- W2912271742 abstract "We investigate the crystal growth of BiSb thin films on various GaAs substrates with different crystal orientation and surface termination. We found the non-trivial growth mode of BiSb which depends on the crystal orientation/surface termination of GaAs. While BiSb(0 0 1) can be grown epitaxially on GaAs(1 1 1)A, only textured BiSb(0 1 2) can be grown on GaAs(1 1 1)B even with the help of an ultrathin Bi buffer layer, indicating the critical role of surface termination of the GaAs(1 1 1) substrates. Meanwhile, only textured BiSb(0 0 1) thin films grow on GaAs(0 0 1) instead of BiSb(0 1 2), indicating that symmetry matching plays a little role on the growth of BiSb on GaAs(0 0 1)." @default.
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- W2912271742 date "2019-04-01" @default.
- W2912271742 modified "2023-10-16" @default.
- W2912271742 title "Influence of crystal orientation and surface termination on the growth of BiSb thin films on GaAs substrates" @default.
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- W2912271742 doi "https://doi.org/10.1016/j.jcrysgro.2019.01.041" @default.
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