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• W2912277504 abstract "We report a complementary metal oxide semiconductor (CMOS) inverter made of p-type low-temperature poly-Si (LTPS) thin-film transistor (TFT) using blue laser annealing of amorphous Si and an n-type amorphous indium-gallium-zinc oxide (a-IGZO) TFT. The LTPS TFT exhibits a field-effect mobility, threshold voltage, and subthreshold swing of 81.76 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs, -1.1 V, and 0.65 V/dec, respectively, and the a-IGZO TFT exhibits 13.52 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs, 1.2 V and 0.25 V/dec, respectively. The CMOS inverter shows a full swing and a high gain of 114.28 V/V and a wide noise margin with rising and falling times of 1.44 and 3.52 μs, respectively." @default.
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• W2912277504 date "2019-03-01" @default.
• W2912277504 modified "2023-10-16" @default.
• W2912277504 title "A High-Gain Inverter With Low-Temperature Poly-Si Oxide Thin-Film Transistors" @default.
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• W2912277504 doi "https://doi.org/10.1109/led.2019.2893194" @default.
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