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• W2912281830 startingPage "389" @default.
• W2912281830 abstract "The next generation of electronic devices requires faster operation velocity, higher storage capacity and reduction of the power consumption. In this context, resistive switching memory chips emerge as promising candidates for developing new non-volatile memory modules. Manganites have received increasing interest as memristive material as they exhibit a remarkable switching response. Nevertheless, their integration in CMOS-compatible substrates, such as silicon wafers, requires further effort. Here the integration of LaMnO 3+δ as memristive material in a metal–insulator–metal structure is presented using a silicon-based substrate and the pulsed injection metal organic chemical vapour deposition technique. We have developed three different growth strategies with which we are able to tune the oxygen content and Mn oxidation state moving from an orthorhombic to a rhombohedral structure for the active LaMnO 3+δ material. Furthermore, a good resistive switching response has been obtained for LaMnO 3+δ -based devices fabricated using optimized growth strategies." @default.
• W2912281830 created "2019-02-21" @default.
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• W2912281830 date "2019-02-07" @default.
• W2912281830 modified "2023-10-18" @default.
• W2912281830 title "Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD" @default.
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• W2912281830 doi "https://doi.org/10.3762/bjnano.10.38" @default.
• W2912281830 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/6369995" @default.
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