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• W2912362241 abstract "An 8Kx192b charge trap transistor one time programmable memory (OTPM) is designed and manufactured in GLOBALFOUNDRIES 14-nm bulk FinFET technology without process adders or additional masks. A write timer state machine issues multicycle 192b parallel programming with per bit overwrite protection to minimize stress conditions during a write. On-chip generated voltages are temperature dependent, enabling writes and reads at military grade temperatures. A differential current sense amplifier with self-biased margining circuitry enables programming the OTPM twin cell with known repeatable margin across process–voltage–temperature. Hardware qualification certifies the OTPM to a 10-year 105 °C data retention specification and <3 PPM end of life bit error rate pre-ECC." @default.
• W2912362241 created "2019-02-21" @default.
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• W2912362241 date "2018-12-01" @default.
• W2912362241 modified "2023-09-27" @default.
• W2912362241 title "14-nm FinFET 1.5 Mb Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Differential Current Sensing" @default.
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• W2912362241 doi "https://doi.org/10.1109/lssc.2019.2899519" @default.
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