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• W2912372845 endingPage "023009" @default.
• W2912372845 startingPage "023009" @default.
• W2912372845 abstract "Realizing spin MOSFETs is essential for non-volatile high-speed electronics; however, obtaining practically large magnetoresistance (MR) is challenging because of the difficulties of growing high-quality single-crystalline ferromagnet/semiconductor heterostructures and of obtaining efficient gate modulation. In this study, for realizing a vertical spin MOSFET, we demonstrate side-gate-induced current modulation in a magnetic tunnel junction composed of Fe electrodes and an oxide semiconductor GaOx barrier at RT. We show gate modulation of the current up to ∼10% and a MR ratio up to 40%, which is larger than that obtained at RT in previous spin-valve devices targeted for spin MOSFETs (∼0.1%)." @default.
• W2912372845 created "2019-02-21" @default.
• W2912372845 creator A5029402534 @default.
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• W2912372845 date "2019-02-01" @default.
• W2912372845 modified "2023-09-30" @default.
• W2912372845 title "Room-temperature side-gate-induced current modulation in a magnetic tunnel junction with an oxide-semiconductor barrier for vertical spin MOSFET operation" @default.
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• W2912372845 doi "https://doi.org/10.7567/1882-0786/aafed6" @default.
• W2912372845 hasPublicationYear "2019" @default.
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