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• W2912382181 abstract "In this research, we studied the integration of radio frequency (RF)-sputtered NiCr resistors to improve the resistor behavior so that the resistance can be independent of temperature, or the temperature coefficient of resistance (TCR). The deposited NiCr (80/20 at.%) films were annealed with or without a seed layer, such as Ti, Cr, and Ni, by rapid thermal annealing (RTA) in the temperature range from 550 °C to 850 °C with 150 °C intervals for 90 s in nitrogen ambient to get obtain films with higher thermal stability. The TCR was dramatically increased after RTA at a higher temperature of 700 °C. The higher RTA temperature showed a larger grain size of the NiCr film and more diffusion of Cr and Ni atoms. The NiCr film deposited on the seed layers showed a lower TCR than that without the seed layer after the RTA process. The TCR values of the 10-nm-thick Cr/100-nm-thick NiCr (top) film were 35.8 ppm/K (at 125 °C) and 56.2 ppm/K (460 °C), respectively, before and after RTA at a temperature of 550 °C for 90 s. This shows the potential of sputtered NiCr film as the resistor for a pressure sensor in CMOS applications considering a back-end-of-line (BEOL) annealing temperature." @default.
• W2912382181 created "2019-02-21" @default.
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• W2912382181 date "2019-04-01" @default.
• W2912382181 modified "2023-10-16" @default.
• W2912382181 title "Effect of seed layers and rapid thermal annealing on the temperature coefficient of resistance of Ni Cr thin films" @default.
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• W2912382181 doi "https://doi.org/10.1016/j.tsf.2019.02.001" @default.
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