FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2912386018> ?p ?o ?g. }

• W2912386018 endingPage "3175" @default.
• W2912386018 startingPage "3169" @default.
• W2912386018 abstract "We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters. The conversion process of PHPS to SiO2 was optimized by varying the number of intense pulses and applied voltage. The chemical structure and gate dielectric properties of the PHPS-derived SiO2 films were systematically investigated via Fourier transform infrared spectroscopy and leakage current measurements, respectively. The resulting PHPS-derived SiO2 gate dielectric layer showed a dielectric constant of 3.8 at 1 MHz and a leakage current density of 9.7 × 10-12 A cm-2 at 4.0 MV cm-1. The PHPS-derived SiO2 film was utilized as a gate dielectric for fabricating benchmark p- and n-channel OFETs based on pentacene and N,N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8), respectively. The resulting OFETs exhibited good electrical properties, such as carrier mobilities of 0.16 (±0.01) cm2 V-1 s-1 (for the pentacene OFET) and 0.02 (±0.01) cm2 V-1 s-1 (for the PTCDI-C8 OFET) and an on-off current ratio larger than 105. The fabrication of the PHPS-derived SiO2 gate dielectric layer by a simple solution process and intense pulsed UV irradiation at room temperature serves as a novel approach for the realization of large-area flexible electronics in the flexible device industry of the future." @default.
• W2912386018 created "2019-02-21" @default.
• W2912386018 creator A5000583276 @default.
• W2912386018 creator A5000968992 @default.
• W2912386018 creator A5022726594 @default.
• W2912386018 creator A5043089016 @default.
• W2912386018 creator A5065005994 @default.
• W2912386018 creator A5065408391 @default.
• W2912386018 creator A5073088764 @default.
• W2912386018 date "2019-01-01" @default.
• W2912386018 modified "2023-10-17" @default.
• W2912386018 title "Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates" @default.
• W2912386018 cites W1505063095 @default.
• W2912386018 cites W1567496999 @default.
• W2912386018 cites W1570618996 @default.
• W2912386018 cites W1947959263 @default.
• W2912386018 cites W1964836855 @default.
• W2912386018 cites W1966279378 @default.
• W2912386018 cites W1969289405 @default.
• W2912386018 cites W1972365867 @default.
• W2912386018 cites W1972745553 @default.
• W2912386018 cites W1976666926 @default.
• W2912386018 cites W1991843043 @default.
• W2912386018 cites W1992016081 @default.
• W2912386018 cites W1999211684 @default.
• W2912386018 cites W2004277091 @default.
• W2912386018 cites W2007101823 @default.
• W2912386018 cites W2020657280 @default.
• W2912386018 cites W2027903128 @default.
• W2912386018 cites W2042691982 @default.
• W2912386018 cites W2043642475 @default.
• W2912386018 cites W2046720803 @default.
• W2912386018 cites W2047830364 @default.
• W2912386018 cites W2047986831 @default.
• W2912386018 cites W2048073965 @default.
• W2912386018 cites W2048468022 @default.
• W2912386018 cites W2049547726 @default.
• W2912386018 cites W2065577830 @default.
• W2912386018 cites W2069142405 @default.
• W2912386018 cites W2075774421 @default.
• W2912386018 cites W2077770884 @default.
• W2912386018 cites W2080730325 @default.
• W2912386018 cites W2082773488 @default.
• W2912386018 cites W2087494887 @default.
• W2912386018 cites W2141008036 @default.
• W2912386018 cites W2159881096 @default.
• W2912386018 cites W2239414000 @default.
• W2912386018 cites W2296673354 @default.
• W2912386018 cites W2312287523 @default.
• W2912386018 cites W2332871858 @default.
• W2912386018 cites W2337771521 @default.
• W2912386018 cites W2567749087 @default.
• W2912386018 cites W2609930621 @default.
• W2912386018 cites W2742640197 @default.
• W2912386018 cites W2765725498 @default.
• W2912386018 cites W2806532848 @default.
• W2912386018 cites W293513321 @default.
• W2912386018 doi "https://doi.org/10.1039/c8ra09831j" @default.
• W2912386018 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/35518960" @default.
• W2912386018 hasPublicationYear "2019" @default.
• W2912386018 type Work @default.
• W2912386018 sameAs 2912386018 @default.
• W2912386018 citedByCount "8" @default.
• W2912386018 countsByYear W29123860182020 @default.
• W2912386018 countsByYear W29123860182021 @default.
• W2912386018 countsByYear W29123860182022 @default.
• W2912386018 countsByYear W29123860182023 @default.
• W2912386018 crossrefType "journal-article" @default.
• W2912386018 hasAuthorship W2912386018A5000583276 @default.
• W2912386018 hasAuthorship W2912386018A5000968992 @default.
• W2912386018 hasAuthorship W2912386018A5022726594 @default.
• W2912386018 hasAuthorship W2912386018A5043089016 @default.
• W2912386018 hasAuthorship W2912386018A5065005994 @default.
• W2912386018 hasAuthorship W2912386018A5065408391 @default.
• W2912386018 hasAuthorship W2912386018A5073088764 @default.
• W2912386018 hasBestOaLocation W29123860181 @default.
• W2912386018 hasConcept C113196181 @default.
• W2912386018 hasConcept C119599485 @default.
• W2912386018 hasConcept C127413603 @default.
• W2912386018 hasConcept C133386390 @default.
• W2912386018 hasConcept C136525101 @default.
• W2912386018 hasConcept C142724271 @default.
• W2912386018 hasConcept C145598152 @default.
• W2912386018 hasConcept C16317505 @default.
• W2912386018 hasConcept C165801399 @default.
• W2912386018 hasConcept C166972891 @default.
• W2912386018 hasConcept C171250308 @default.
• W2912386018 hasConcept C172385210 @default.
• W2912386018 hasConcept C178790620 @default.
• W2912386018 hasConcept C185592680 @default.
• W2912386018 hasConcept C192562407 @default.
• W2912386018 hasConcept C195370968 @default.
• W2912386018 hasConcept C204787440 @default.
• W2912386018 hasConcept C2776498980 @default.
• W2912386018 hasConcept C2779227376 @default.
• W2912386018 hasConcept C49040817 @default.
• W2912386018 hasConcept C71924100 @default.
• W2912386018 hasConcept C87359718 @default.

• next