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• W2912394154 abstract "Transparent conductor SrVO3 thin films were grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT), SiO2/Si, LaAlO3, and sapphire substrates using RF magnetron sputtering deposition with commercial SrVO3 targets at temperatures as low as 400 °C. Considering the complex phases of SrVO3 material systems, the growth temperature and sputtering gases were optimized and precisely controlled to yield a transparent and conductive SrVO3 phase. The authors used a mixed gas atmosphere of Ar and H2 during growth for reduction. Structural and morphological properties of all SrVO3 films were investigated using x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy. XRD and HRTEM showed a highly crystalline cubic phase of SrVO3 films. In addition, HRTEM showed that a superstructure along the [100] direction could be formed due to Jahn-Teller distortion in the cubic phase of SrVO3 films. The authors obtained a resistivity of 0.2 × 10−3 Ω cm, mobility of 1.82 cm2/(V s), and carrier concentration of 1.57 × 1022 cm−3 for SrVO3/LSAT films. Optical transmittance was measured as 88% at a photon wavelength of 633 nm for 39-nm-thick SrVO3 films. Using x-ray photoemission spectroscopy (XPS) and its depth profile analysis, the authors investigated chemical compositions and binding energies of Sr, V, and O atoms in SrVO3 films, and their depth profiles. The authors found a correlation between the resistivities and XPS binding energy spectra for SrVO3 films as functions of film thickness and substrates." @default.
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• W2912394154 date "2019-01-22" @default.
• W2912394154 modified "2023-09-27" @default.
• W2912394154 title "Structural and electrical properties of transparent conductor SrVO3 thin films grown using radio frequency sputtering deposition" @default.
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• W2912394154 doi "https://doi.org/10.1116/1.5054666" @default.
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