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• W2912402241 abstract "For metal-insulator-metal (MIM) capacitors applicated in the fields of RF, DRAM, and analog/mixed-signal integrated circuits, a high capacitance density is imperative with the downscaling of the device feature size. In this work, the microwave annealing technique is investigated to enhance the dielectric characteristics of Al2O3/ZrO2/Al2O3 based MIM capacitors. The results show that the permittivity of ZrO2 is increased to 41.9 (~ 40% enhanced) with a microwave annealing at 1400 W for 5 min. The substrate temperature is lower than 400 °C, which is compatible with the back end of line process. The leakage current densities are 1.23 × 10−8 and 1.36 × 10−8 A/cm2 for as-deposited sample and 1400 W sample, respectively, indicating that the leakage property is not deteriorated. The conduction mechanism is confirmed as field-assisted tunneling." @default.
• W2912402241 created "2019-02-21" @default.
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• W2912402241 date "2019-02-11" @default.
• W2912402241 modified "2023-10-13" @default.
• W2912402241 title "Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing" @default.
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• W2912402241 doi "https://doi.org/10.1186/s11671-019-2874-5" @default.
• W2912402241 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/6370895" @default.
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• W2912402241 hasPublicationYear "2019" @default.
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