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- W2912430004 abstract "Bi-containing III–V semiconductors such as GaAs1−x Bi x and related semiconductors allow high flexibility in bandgap engineering and the modification of the band structure, resulting in materials with a temperature-insensitive bandgap or a large energy difference between the valence band and the split-off band. Conventionally, it has been considered difficult to fabricate group III–V semiconductors containing Bi, but recently it has become possible to obtain high-quality GaAs1−x Bi x and related semiconductors. The realization of GaAs1−x Bi x and GaSb1−x Bi x laser diodes indicates the potential of Bi-containing III–V semiconductors. This chapter outlines recent results on laser diodes, solar cells, terahertz detectors, and photodetectors consisting of bismuth-containing III–V semiconductors." @default.
- W2912430004 created "2019-02-21" @default.
- W2912430004 creator A5017480216 @default.
- W2912430004 creator A5064831959 @default.
- W2912430004 date "2019-02-08" @default.
- W2912430004 modified "2023-10-16" @default.
- W2912430004 title "Applications of Bismuth‐Containing <scp>III</scp> – <scp>V</scp> Semiconductors in Devices" @default.
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- W2912430004 doi "https://doi.org/10.1002/9781119354987.ch23" @default.
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