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- W2912474615 abstract "Steep-slope p-type 2D WSe <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> back-gated field-effect transistors (FETs) are realized by using van der Waals Pt-WSe <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> contact and HfZrO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> / Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> as the dielectric layer. The van der Waals Pt-WSe <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> contact is free from disorder and Fermi level pinning and decreases the subthreshold slope. The WSe <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> NCFET with van der Waals contact shows low subthreshold slope for both forward and reverse gate voltage sweep (the minimum <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$text{SS}_{text{forward}}=18.2 text{mV}/text{dec}$</tex> and <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$text{SS}_{text{reverse}}=44.1 text{mV}/text{dec}$</tex> ) with a hysteresis as small as 20 mV at subthreshold region." @default.
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- W2912474615 date "2018-12-01" @default.
- W2912474615 modified "2023-10-17" @default.
- W2912474615 title "Steep Slope p-type 2D WSe<inf>2</inf> Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance" @default.
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- W2912474615 doi "https://doi.org/10.1109/iedm.2018.8614493" @default.
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