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- W2912493405 abstract "Material properties of orthorhombic κ-phase (InxGa1−x)2O3 thin films grown on a c-plane sapphire substrate by pulsed-laser deposition are reported for an indium content up to x ∼ 0.35. This extended range of miscibility enables band gap engineering between 4.3 and 4.9 eV. The c-lattice constant as well as the bandgap depends linearly on the In content. For x > 0.35, a phase change to the hexagonal InGaO3(ii) and the cubic bixbyite structure occurred. The dielectric function and the refractive index were determined by spectroscopic ellipsometry as a function of the alloy composition. We propose zirconium to induce n-type conductivity and have achieved electrically conducting thin films with a room temperature conductivity of up to 0.1 S/cm for samples with a low In content of about x = 0.01. Temperature-dependent Hall-effect measurements yielded a thermal activation energy of the free electron density of 190 meV. Schottky barrier diodes with rectification ratios up to 106 were investigated by quasi-static capacitance voltage and temperature-dependent current voltage measurements." @default.
- W2912493405 created "2019-02-21" @default.
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- W2912493405 date "2019-02-01" @default.
- W2912493405 modified "2023-10-07" @default.
- W2912493405 title "Structural, optical, and electrical properties of orthorhombic κ-(In<i>x</i>Ga1−<i>x</i>)2O3 thin films" @default.
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- W2912493405 doi "https://doi.org/10.1063/1.5054394" @default.
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