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• W2912507530 endingPage "553" @default.
• W2912507530 startingPage "550" @default.
• W2912507530 abstract "In spite of extensive research, the physics of electric transport in the OFF (high resistance) state of resistive random access memory remains poorly understood. Here, we propose a theory that explains the observed activation nature of that transport, its exponential non-ohmicity, variations between nominally identical structures, and failure trends. Our theory proceeds from the finding that the diffusion transport mechanisms must be ruled out as leading to nonphysically high temperatures (T ~ 4000 - 5000 K) well above melting. The Schottky emission remains acceptable due to its underlying ballistic transport by ~1 eV electrons spreading the Joule heat over much larger distances without melting. Taking into account, the random fields of charged defects the Schottky emission enables one to describe the device variability and failures." @default.
• W2912507530 created "2019-02-21" @default.
• W2912507530 creator A5016776314 @default.
• W2912507530 creator A5061173568 @default.
• W2912507530 date "2019-04-01" @default.
• W2912507530 modified "2023-09-26" @default.
• W2912507530 title "OFF State Conduction in Filamentary RRAM" @default.
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• W2912507530 doi "https://doi.org/10.1109/led.2019.2899258" @default.
• W2912507530 hasPublicationYear "2019" @default.
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