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- W2912509349 abstract "This paper presents a fully integrated floating gate driver using adaptive gate drive technique (AGDT). Without the breakdown risk of thin-gate-oxide devices in high-voltage applications and the requirements for complex bootstrap structures in dual NMOS power trains, the proposed floating gate driver, based on current source driving with active-clamping-module (ACM), can shift up driving signal from low voltage rang to wide range high voltage output. Compared with previous designs, it consumes no static current and requires no off-chip capacitor for bootstrap nor off-chip power diode for asynchronous rectification, which can enhance efficiency of whole system. Implemented in standard 0.35μm 30V BCD process and using thin-gate-oxide PMOS as high-side power transistor, measurement results demonstrate that the proposed gate driver can provide effective output signals in $8 sim25mathrm{V}$ wide range output." @default.
- W2912509349 created "2019-02-21" @default.
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- W2912509349 date "2018-08-01" @default.
- W2912509349 modified "2023-10-18" @default.
- W2912509349 title "A Fully Integrated Floating Gate Driver with Adaptive Gate Drive Technique for High-Voltage Applications" @default.
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- W2912509349 doi "https://doi.org/10.1109/mwscas.2018.8624041" @default.
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