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• W2912584319 abstract "The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes." @default.
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• W2912584319 date "2019-01-24" @default.
• W2912584319 modified "2023-09-24" @default.
• W2912584319 title "Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices" @default.
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• W2912584319 doi "https://doi.org/10.1117/12.2501598" @default.
• W2912584319 hasPublicationYear "2019" @default.
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