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• W2912608351 abstract "In this work, the epitaxy of SrTiO3 and BaTiO3 perovskites on the (001)-oriented silicon substrate by molecular beam epitaxy is investigated. The heterostructures are studied by means of various structural and electrical characterization techniques. In this study especially, the authors reveal experimentally by nanobeam electron diffraction analysis the critical thickness prior relaxation of BaTiO3 grown on an SrTiO3/Si pseudosubstrate. They also propose to use a strain mediated superlattice composed of stacked [BaTiO3/SrTiO3] bilayers to prevent misfit dislocation formation. Using this approach, they could demonstrate high quality and dislocation free BaTiO3 ferroelectric layers integrated on silicon as confirmed by piezo-force microscopy techniques." @default.
• W2912608351 created "2019-02-21" @default.
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• W2912608351 date "2019-01-31" @default.
• W2912608351 modified "2023-10-18" @default.
• W2912608351 title "Epitaxial growth and strain relaxation studies of BaTiO3 and BaTiO3/SrTiO3 superlattices grown by MBE on SrTiO3-buffered Si(001) substrate" @default.
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• W2912608351 doi "https://doi.org/10.1116/1.5082237" @default.
• W2912608351 hasPublicationYear "2019" @default.
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