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- W2912639201 abstract "In order to enhance scalability, performance and operation efficiency for future embedded flash memory, p-channel fin-on-insulator (FOI) FinFET charge trapping memory devices with HfO 2 charge trapping layer, Al 2 O 3 3 tunneling layer and blocking layers as well as [TiN/W] metal gate (Metal/Al 2 O 3 /HfO 2 /Al 2 O 3 /Si, named as MAHAS) have been successfully fabricated. Afterwards, we systematically investigate the static electrical performance, program/erase speeds, date retention and endurance characteristics of the FOI-MAHAS memory with p-channel. A larger memory window, lower program/erase (P/E) voltages, enhanced P/E speed, along with good data retention and endurance characteristics are experimentally realized. Therefore, the proposed p-channel FOIMAHAS charge trapping memory is promising for future embedded flash memory applications." @default.
- W2912639201 created "2019-02-21" @default.
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- W2912639201 date "2018-10-01" @default.
- W2912639201 modified "2023-09-26" @default.
- W2912639201 title "Characterization of P-Channel FOI-MAHAS Charge Trapping Memory with Improved Operation Characteristics" @default.
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- W2912639201 doi "https://doi.org/10.1109/s3s.2018.8640214" @default.
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