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• W2912658576 endingPage "8336" @default.
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• W2912658576 abstract "Solution-processed nonvolatile organic transistor memory devices are fabricated by employing semiconductor blends of p-channel 6,13-bis(triisopropylsilylethynyl)pentacene and n-channel poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (P(NDI2OD-2T); N2200) on polystyrene-brush as a polymer electret. Electret-based memory characteristics are significantly changed depending on the frontier molecular orbitals of the active semiconductors because the charge-trapping efficiency is mainly determined by the energy barrier to transfer electrons and holes from the active channel to the electret layer. A semiconductor mixture with an optimized blending ratio results in an efficient programming and erasing process. Thus, we obtained a remarkably high ratio of ON/OFF current (memory ratio) about 107 and a large amount of shifts in the threshold voltage (memory window) between the programmed and erased states of 55 V, while single-component N2200 showed only writing-once-read-many (WORM)-type memory. Especially, the programmed data can be stably retained more than 10 years with a sufficient memory ratio of 103. Furthermore, our semiconductor blend system leads to preferable vertical phase separation, which affords good reliability under a sequential memory operation condition as well as stability in ambient air. It is expected that our memory devices can be applied for versatile data storage in printed and flexible electronic applications." @default.
• W2912658576 created "2019-02-21" @default.
• W2912658576 creator A5016638621 @default.
• W2912658576 creator A5038974884 @default.
• W2912658576 creator A5073729647 @default.
• W2912658576 date "2019-02-01" @default.
• W2912658576 modified "2023-10-11" @default.
• W2912658576 title "Solution-Processed Nonvolatile Organic Transistor Memory Based on Semiconductor Blends" @default.
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• W2912658576 doi "https://doi.org/10.1021/acsami.8b20571" @default.
• W2912658576 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/30707007" @default.
• W2912658576 hasPublicationYear "2019" @default.
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