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- W2912659332 abstract "The use of three different indium (In) compositions in InxGa1−xN quantum wells (QWs) with staggered geometry is proposed to improve the photovoltaic properties of InGaN/GaN multiple quantum well solar cell (MQWSC). Improved lattice matching at the last QW and p-GaN interface along with staggered QWs leads to an increase in short circuit current density, resulting in an overall 45% enhancement in efficiency as compared to reference cell. The optimized MQWSC with staggered QWs solar cell shows a fill factor (FF) of 0.68 and efficiency of 1.21% under AM1.5G illumination." @default.
- W2912659332 created "2019-02-21" @default.
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- W2912659332 date "2019-01-01" @default.
- W2912659332 modified "2023-10-14" @default.
- W2912659332 title "Improved Extraction of Photo-Generated Carriers in InGaN MQWSC: Effect of Staggered Quantum Wells with Triple Indium Content" @default.
- W2912659332 cites W2018685415 @default.
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- W2912659332 doi "https://doi.org/10.1007/978-3-319-97604-4_73" @default.
- W2912659332 hasPublicationYear "2019" @default.
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