FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2912667517> ?p ?o ?g. }

• W2912667517 endingPage "020925" @default.
• W2912667517 startingPage "020925" @default.
• W2912667517 abstract "Batch processing of aluminum nitride (AlN) by thermal atomic layer deposition (ALD) was studied at high temperatures of 500–550 °C using aluminum chloride (AlCl3) and ammonia (NH3) as metal and nitrogen precursors. The growth behavior, chemical composition, morphology, crystallinity, and residual stress of the AlN films were characterized by ellipsometry, x-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, x-ray diffraction, and the wafer curvature method, respectively. The deposited AlN films at 525 °C had a good batch thickness uniformity of 2.6%, a low surface roughness of ∼1 nm, a low Cl impurity level of ∼1.2%, and a hexagonal polycrystalline structure with a preferential (002) orientation. An obvious dependence between film properties and deposition temperature was found. The evaluation in deposition temperature from 500 to 550 °C resulted in an increase of the growth-per-cycle, refractive index, and tensile stress as well as a decrease of Cl and O impurity levels in the AlN films. Based on these findings, the authors concluded that high quality polycrystalline AlN films with a preferential (002) orientation can be grown with ALD in a large batch reactor at high temperatures (500–550 °C).Batch processing of aluminum nitride (AlN) by thermal atomic layer deposition (ALD) was studied at high temperatures of 500–550 °C using aluminum chloride (AlCl3) and ammonia (NH3) as metal and nitrogen precursors. The growth behavior, chemical composition, morphology, crystallinity, and residual stress of the AlN films were characterized by ellipsometry, x-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, x-ray diffraction, and the wafer curvature method, respectively. The deposited AlN films at 525 °C had a good batch thickness uniformity of 2.6%, a low surface roughness of ∼1 nm, a low Cl impurity level of ∼1.2%, and a hexagonal polycrystalline structure with a preferential (002) orientation. An obvious dependence between film properties and deposition temperature was found. The evaluation in deposition temperature from 500 to 550 °C resulted in an increase of the growth-per-cycle, refractive index, and tensile stress as well as a decrease of Cl and O impurity level..." @default.
• W2912667517 created "2019-02-21" @default.
• W2912667517 creator A5004506255 @default.
• W2912667517 creator A5037865528 @default.
• W2912667517 creator A5065010566 @default.
• W2912667517 creator A5069701914 @default.
• W2912667517 date "2019-03-01" @default.
• W2912667517 modified "2023-09-24" @default.
• W2912667517 title "Batch processing of aluminum nitride by atomic layer deposition from AlCl₃ and NH₃" @default.
• W2912667517 cites W1971223999 @default.
• W2912667517 cites W1976758220 @default.
• W2912667517 cites W1984824120 @default.
• W2912667517 cites W1990055779 @default.
• W2912667517 cites W1995191254 @default.
• W2912667517 cites W1997320144 @default.
• W2912667517 cites W1997447722 @default.
• W2912667517 cites W2006266042 @default.
• W2912667517 cites W2010976328 @default.
• W2912667517 cites W2011159691 @default.
• W2912667517 cites W2025933302 @default.
• W2912667517 cites W2031639588 @default.
• W2912667517 cites W2032436410 @default.
• W2912667517 cites W2042993801 @default.
• W2912667517 cites W2062351169 @default.
• W2912667517 cites W2064017182 @default.
• W2912667517 cites W2070858123 @default.
• W2912667517 cites W2078593584 @default.
• W2912667517 cites W2084808940 @default.
• W2912667517 cites W2088793173 @default.
• W2912667517 cites W2093418857 @default.
• W2912667517 cites W2097758255 @default.
• W2912667517 cites W2098130488 @default.
• W2912667517 cites W2131854177 @default.
• W2912667517 cites W2149248689 @default.
• W2912667517 cites W2151006446 @default.
• W2912667517 cites W2171641792 @default.
• W2912667517 cites W2293003130 @default.
• W2912667517 cites W2531683414 @default.
• W2912667517 cites W2783413511 @default.
• W2912667517 doi "https://doi.org/10.1116/1.5079509" @default.
• W2912667517 hasPublicationYear "2019" @default.
• W2912667517 type Work @default.
• W2912667517 sameAs 2912667517 @default.
• W2912667517 citedByCount "9" @default.
• W2912667517 countsByYear W29126675172019 @default.
• W2912667517 countsByYear W29126675172020 @default.
• W2912667517 countsByYear W29126675172021 @default.
• W2912667517 countsByYear W29126675172022 @default.
• W2912667517 countsByYear W29126675172023 @default.
• W2912667517 crossrefType "journal-article" @default.
• W2912667517 hasAuthorship W2912667517A5004506255 @default.
• W2912667517 hasAuthorship W2912667517A5037865528 @default.
• W2912667517 hasAuthorship W2912667517A5065010566 @default.
• W2912667517 hasAuthorship W2912667517A5069701914 @default.
• W2912667517 hasConcept C127313418 @default.
• W2912667517 hasConcept C127413603 @default.
• W2912667517 hasConcept C151730666 @default.
• W2912667517 hasConcept C171250308 @default.
• W2912667517 hasConcept C191897082 @default.
• W2912667517 hasConcept C192562407 @default.
• W2912667517 hasConcept C194760766 @default.
• W2912667517 hasConcept C2779227376 @default.
• W2912667517 hasConcept C2816523 @default.
• W2912667517 hasConcept C42360764 @default.
• W2912667517 hasConcept C513153333 @default.
• W2912667517 hasConcept C64297162 @default.
• W2912667517 hasConcept C69544855 @default.
• W2912667517 hasConceptScore W2912667517C127313418 @default.
• W2912667517 hasConceptScore W2912667517C127413603 @default.
• W2912667517 hasConceptScore W2912667517C151730666 @default.
• W2912667517 hasConceptScore W2912667517C171250308 @default.
• W2912667517 hasConceptScore W2912667517C191897082 @default.
• W2912667517 hasConceptScore W2912667517C192562407 @default.
• W2912667517 hasConceptScore W2912667517C194760766 @default.
• W2912667517 hasConceptScore W2912667517C2779227376 @default.
• W2912667517 hasConceptScore W2912667517C2816523 @default.
• W2912667517 hasConceptScore W2912667517C42360764 @default.
• W2912667517 hasConceptScore W2912667517C513153333 @default.
• W2912667517 hasConceptScore W2912667517C64297162 @default.
• W2912667517 hasConceptScore W2912667517C69544855 @default.
• W2912667517 hasFunder F4320321855 @default.
• W2912667517 hasIssue "2" @default.
• W2912667517 hasLocation W29126675171 @default.
• W2912667517 hasOpenAccess W2912667517 @default.
• W2912667517 hasPrimaryLocation W29126675171 @default.
• W2912667517 hasRelatedWork W2079899074 @default.
• W2912667517 hasRelatedWork W2139442112 @default.
• W2912667517 hasRelatedWork W2330136148 @default.
• W2912667517 hasRelatedWork W2580545854 @default.
• W2912667517 hasRelatedWork W2780575035 @default.
• W2912667517 hasRelatedWork W2910258616 @default.
• W2912667517 hasRelatedWork W2949072884 @default.
• W2912667517 hasRelatedWork W4236275941 @default.
• W2912667517 hasRelatedWork W4250890523 @default.
• W2912667517 hasRelatedWork W573280693 @default.
• W2912667517 hasVolume "37" @default.
• W2912667517 isParatext "false" @default.
• W2912667517 isRetracted "false" @default.

• next