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- W2912669957 abstract "Abstract In this work, operationally and mechanically stable organic field‐effect transistors (OFETs) are demonstrated on aramid fiber‐based paper enabled by a simple and universal surface planarization method. By employing a nanoimprint lithography‐inspired surface smoothening method, rough aramid paper is successfully smoothened from a scale of several tens of micrometers to a sub‐nanometer‐scale surface roughness. Owing to the sub‐nanometer‐scale surface roughness of the aramid paper, the OFETs fabricated on the aramid paper exhibit decent field‐effect mobility (0.25 cm 2 V −1 s −1 ) with a high current on‐to‐off ratio (>10 7 ), both of which are comparable with those of OFETs fabricated on rigid silicon substrates. Moreover, the OFETs fabricated on the aramid paper exhibit both high operational and mechanical stability; this is indicated by a bias‐stress‐induced threshold voltage shift (∆ V TH ≈ 4.27 V under an excessive gate bias stress of 1.7 MV cm −1 for 1 h 30 min) comparable to that of OFETs on a rigid silicon substrate, moderate field‐effect mobility, and a threshold voltage stability under 1000 bending cycles with a compressive strain of 1%. The demonstration of highly stable OFETs on paper enabled by the simple planarization method will expand the potential use of various types of paper in electronic applications." @default.
- W2912669957 created "2019-02-21" @default.
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- W2912669957 date "2019-02-06" @default.
- W2912669957 modified "2023-10-15" @default.
- W2912669957 title "Highly Stable Organic Transistors on Paper Enabled by a Simple and Universal Surface Planarization Method" @default.
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- W2912669957 doi "https://doi.org/10.1002/admi.201801731" @default.
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