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- W2912693263 abstract "We present the applications of plasma-assisted molecular beam epitaxy (PAMBE) to fabricate GaN-based optoelectronic devices focusing on laser diodes (LDs). We discuss the basic principles of low-temperature growth and demonstrate the important role of high nitrogen flux in the growth of high-quality InGaN layers. The use of high nitrogen flux enabled demonstration of nitride LDs operating in the range of λ = 388–489 nm grown by PAMBE. The influence of high-quality InGaN waveguides on LD properties is studied. We present state-of-the-art LD structures grown by PAMBE operating at λ = 450 nm realized using thick InGaN waveguides and featuring high optical power of 0.5 W and long lifetimes of 100 000 hours. A novel concept in LD design incorporating a tunnel junction contact for hole injection is also shown." @default.
- W2912693263 created "2019-02-21" @default.
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- W2912693263 date "2019-02-08" @default.
- W2912693263 modified "2023-10-16" @default.
- W2912693263 title "<scp>MBE</scp> of <scp>III</scp> ‐ <scp>Nitride</scp> Heterostructures for Optoelectronic Devices" @default.
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- W2912693263 doi "https://doi.org/10.1002/9781119354987.ch12" @default.
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