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- W2912794195 abstract "In the present work, we investigated the elemental composition, structural and electrical properties of Cu2SnS3 (CTS) ternary semiconductor synthesized by the pyrolytic decomposition of the precursors in vacuum. The molar ratio of Sn/Cu in the precursor solution was varied from 0.2 to 0.6. The x-ray diffraction and Raman analyses confirmed that the synthesized samples mainly consist of tetragonal CTS phase with space group The dependence of the conductivity of CTS samples on temperature was investigated in the temperature range 10-300 K. A crossover between nearest-neighbor hopping and Mott variable-range hopping conduction mechanisms were observed at Analysis of the data yielded the values of the relative acceptor concentration with the critical concentration of the metal–insulator transition (MIT) cm−3, the localization radius with the Bohr radius the dielectric permittivity far from the MIT κ0 = 10.7, the mean acceptor energy meV and the mean density of the localized states meV−1cm−3." @default.
- W2912794195 created "2019-02-21" @default.
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- W2912794195 date "2019-02-27" @default.
- W2912794195 modified "2023-09-27" @default.
- W2912794195 title "Structural properties and variable-range hopping conductivity of Cu<sub>2</sub>SnS<sub>3</sub>" @default.
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- W2912794195 doi "https://doi.org/10.1088/2053-1591/ab0775" @default.
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