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- W2912806079 abstract "Based on the density functional theory (DFT) calculations, a new mechanism about the oxygen vacancies(Vo) in the HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -based ferroelectric devices is presented. In this mechanism, the Vo in m-phase HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> not only serve as the electron traps but also emerge ferroelectricity besides the known o-phase HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> . And the increased remanent polarization during the “wake-up” process is mainly attributed to this part of Vo-m-phase HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ferroelectric cells. Based on the new mechanism, a Kinetic Monte Carlo (KMC) simulator is developed to quantify the typical electric field cycling behaviors observed in the HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -based ferroelectric devices, including the wake-up, fatigue, split-up, and breakdown effects. This new understanding establishes relationship between the Vo and the cycling behaviors, and further shows the connection between the dopant and the wake-up characteristics of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -based ferroelectric device." @default.
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- W2912806079 date "2018-12-01" @default.
- W2912806079 modified "2023-10-18" @default.
- W2912806079 title "Role of Oxygen Vacancies in Electric Field Cycling Behaviors of Ferroelectric Hafnium Oxide" @default.
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- W2912806079 doi "https://doi.org/10.1109/iedm.2018.8614540" @default.
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