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• W2912852913 abstract "In this letter, we report high-performance p-GaN HEMTs on Si with robust gate operation. For the first time, the preserved OFF-state drain blocking capability has been demonstrated in p-GaN HEMTs after forward gate breakdown. Benefitting from the reduced metal/p-GaN contact region, the gate breakdown was limited to take place only at the metal/p-GaN junction, with the p-GaN/AlGaN/GaN junction intact. The device shows state-of-the-art characteristics with a large threshold voltage of 1.75 V at ID of 100 μA/mm (2.3 V by linear extrapolation), a high maximum drain current of 610 mA/mm at VGS of 8 V, a low specific ONresistance of 1.8 mQ · cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> , and a high breakdown voltage of 1100 V defined at ID of 1 μA/mm with grounded substrate." @default.
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• W2912852913 date "2019-04-01" @default.
• W2912852913 modified "2023-10-17" @default.
• W2912852913 title "High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown" @default.
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• W2912852913 doi "https://doi.org/10.1109/led.2019.2897694" @default.
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