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- W2912865519 abstract "The current work investigates photogeneration phenomena in InP-nanowire vertical metal-oxide-semiconductor (MOS) photo-capacitor by developing a theoretical model with second quantization description of photon absorption by a self-consistent simultaneous quantum-electrostatic solver. The equations are solved by using non-equilibrium Green’s function (NEGF) formalism. The vertical MOS device can directly detect the color of incident light in the range of 380–700 nm (visible region) with high spectral resolution by varying the nanowire diameter and applied voltage. The entire visible spectrum is detected with relatively higher device dimensions in comparison to the Si-nanowire based device. Such devices can be a potential candidate for wavelength selective direct photodetection with lesser fabrication complexities." @default.
- W2912865519 created "2019-02-21" @default.
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- W2912865519 date "2019-01-01" @default.
- W2912865519 modified "2023-09-26" @default.
- W2912865519 title "Designing InP-Nanowire Based Vertical Metal-Oxide-Semiconductor Capacitors for Wavelength Selective Visible Light Sensing" @default.
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- W2912865519 doi "https://doi.org/10.1007/978-3-319-97604-4_145" @default.
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