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• W2912945128 abstract "In this work, we demonstrated the direct growth of GaN nanowires on indium tin oxide (ITO)-coated fused silica substrate. The nanowires were grown catalyst-free using plasma-assisted molecular beam epitaxy (PA-MBE). The effect of growth condition on the morphology and quality of the nanowires is systematically investigated. Structural characterization indicates that the nanowires grow in the (0001) direction directly on top of the ITO layer perpendicular to the substrate plane. Optical characterization of the nanowires shows that yellow luminescence is absent from the nanowire’s photoluminescence response, attributed to the low number of defects. Conductive atomic force microscopy (C-AFM) measurement on n-doped GaN nanowires shows good conductivity for individual nanowires, which confirms the potential of using this platform for novel device applications. By using a relatively low-temperature growth process, we were able to successfully grow high-quality single-crystal GaN material without the degradation of the underlying ITO layer." @default.
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• W2912945128 date "2019-02-05" @default.
• W2912945128 modified "2023-09-23" @default.
• W2912945128 title "Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica" @default.
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• W2912945128 doi "https://doi.org/10.1186/s11671-019-2870-9" @default.
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