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• W2912980017 abstract "Abstract Phase‐change memories (PCM) store their information as the material phase (high‐resistive amorphous, respectively low‐resistive crystalline phase) of a chalcogenide metal alloy, the most important compound being Ge 2 Sb 2 Te 5 (GST). PCM are currently evolving from an interesting new concept to a viable, non‐volatile memory technology that is expected eventually to replace no‐longer‐scaling Flash memory technologies. To provide insight into this important evolution, and why PCM are considered an important technology, this chapter describes their different aspects, commencing with basic operation principles and fundamental material properties. Vital to the operation of PCM are not only the vitrification and crystallization properties of the chalcogenide material, but also the phenomenon of electronic threshold switching, thereby enabling low‐voltage Joule heating in the amorphous phase. The understanding and modeling of these effects are outlined, in addition to cell concepts and aspects of integration technology, including optimization schemes aimed at reducing the program current. Finally, the excellent reliability and scaling properties of PCM are discussed." @default.
• W2912980017 created "2019-02-21" @default.
• W2912980017 creator A5016057965 @default.
• W2912980017 creator A5055756800 @default.
• W2912980017 date "2010-07-15" @default.
• W2912980017 modified "2023-10-11" @default.
• W2912980017 title "Phase-Change Memories" @default.
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• W2912980017 doi "https://doi.org/10.1002/9783527628155.nanotech034" @default.
• W2912980017 hasPublicationYear "2010" @default.
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