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• W2912993791 abstract "Non-polar a-plane and m-plane mixed-polarity gallium nitride (GaN) thin films were deposited on an amorphous glass substrate by conventional RF reactive sputtering, using a high-purity-GaN target and nitrogen (N2) as a source gas. We observed that decreasing the kinetic and migration energy of the sputtered species by using a low temperature (200 °C), N2-dominant (>50% of N2 in an N2/Ar ambient) condition is essential for obtaining non-polar GaN thin films. This method may be highly advantageous for the development of low-cost non-polar GaN optoelectronic and/or electronic devices." @default.
• W2912993791 created "2019-02-21" @default.
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• W2912993791 date "2019-04-01" @default.
• W2912993791 modified "2023-10-18" @default.
• W2912993791 title "Non-polar GaN thin films deposition on glass substrate at low temperatures by conventional RF sputtering" @default.
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• W2912993791 doi "https://doi.org/10.1016/j.tsf.2019.02.015" @default.
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