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- W2913785529 abstract "Titanium silicide (TiSi) contacts are commonly used metal-silicon contacts [1]–[3] but are known to diffuse into the active region under high current stress. Recently we demonstrated [4], [5] that graphenic carbon (GC) deposited by CVD has the same low Schottky barrier on silicon as TiSi, but a much improved reliability against high current stress. The drawback of the CVD-GC is the required deposition temperature of ∼ 900 °C. In this paper we demonstrate now that the deposition of graphenic carbon is possible at 100–400 °C by a modified sputter process. We show that the sputtered carbon-silicon (SC-Si) contact is over 109 times more stable against high current stress pulses than the conventionally used TiSi-Si junction, while it has the same or even a lower Schottky barrier. Doping SC by nitrogen (CN) leads to an even lower resistivity and improved stability. The finding that there is a low temperature approach for using the superb carbon properties has important consequences for the reliability of contacts to silicon and opens up the use of GC in a plethora of other applications." @default.
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- W2913785529 date "2018-12-01" @default.
- W2913785529 modified "2023-09-23" @default.
- W2913785529 title "Low Temperature Sputtered Graphenic Carbon Enables Highly Reliable Contacts to Silicon" @default.
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- W2913785529 doi "https://doi.org/10.1109/iedm.2018.8614643" @default.
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